The invention discloses a preparation process method for improving the photoelectric detector chip yield. Ohmic ring photoetching and corrosion are firstly completed on an epitaxial wafer, and SiO2 diffusion barrier film deposition is carried out; then diffusion holes are formed, conducting medium diffusion is carried out, and after conducting medium diffusion is completed, SiNx antireflection film deposition, and P window and cleavage channel photoetching are carried out, P window and cleavage channel etching are carried out, and annealing treatment is carried out; and then manufacturing of aP electrode and an N electrode is carried out. The performance and the stability of manufacturing the photoelectric detector chip can be improved, the chip yield is improved by more than 30%, the production efficiency of the photoelectric detector chips is greatly improved, and the production cost is effectively saved.