The invention discloses a light emitting diode epitaxial wafer as well as a production method thereof and belongs to the field of semiconductor technology. The epitaxial wafer comprises a substrate, an electron providing layer, an active layer and a hole providing layer, the electron providing layer, the active layer and the hole providing layer are sequentially stacked on the substrate, the holeproviding layer comprises (n+1) first sublayers and n second sublayers, n is a positive integer, and the (n+1) first sublayers and the n second sublayers are alternately stacked; and each first sublayer is made from P type doped gallium nitride, and each second sublayer is made from niobium doped gallium nitride. The light emitting diode epitaxial wafer disclosed by the invention has the advantages that at least one niobium doped gallium nitride layer is inserted into the P type doped gallium nitride, an interface of the niobium doped gallium nitride and the P type doped gallium nitride has relatively strong two-dimensional cavitation, and horizontal expansion of holes provided by the P type doped gallium nitride is facilitated, so that hole mobility is greatly improved.