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发明公开
CN109569262A 一种去除多晶硅尾气中氯硅烷的方法、装置及应用 无效 - 驳回

一种去除多晶硅尾气中氯硅烷的方法、装置及应用
摘要：
本发明涉及多晶硅生产技术领域，公开了一种去除多晶硅尾气中氯硅烷的方法，包括以下处理工序：收集，收集多晶硅尾气；冷凝，将收集到的多晶硅尾气进行冷凝处理，使其析出部分氯硅烷；吸收，将冷凝处理后的多晶硅尾气通过吸附剂，继续吸附除去尾气内残留的氯硅烷。还公开了一种去除多晶硅尾气中氯硅烷的装置，包括取样组件和深冷机构；所述取样组件上连接有管路，管路穿过深冷机构经冷却后连接有吸附组件，吸附组件内填充有吸附剂；所述吸附组件具有出口。本去除多晶硅尾气中氯硅烷的方法及装置可以去除尾气中的氯硅烷，操作方便有效，能在检测尾气中痕量磷化氢气体含量时，保护检测装置，延长其使用寿命，降低检测成本。
摘要（英）：

The invention relates to the technical field of polycrystalline silicon production and discloses a method for removing chlorosilane in polycrystalline silicon tail gas. The method includes treatment procedures: collection, namely collecting the polycrystalline silicon tail gas; condensation, namely subjecting the collected polycrystalline silicon tail gas to condensation treatment to separate outpart of chlorosilane; absorption, to be more specific, adopting an adsorbing agent for continuing adsorption of residual chlorosilane in the polycrystalline silicon tail gas subjected to condensationtreatment. The invention further discloses a device for removing chlorosilane in polycrystalline silicon tail gas. The device comprises a sampling component and a deep cooling mechanism, the samplingcomponent is connected with a pipeline, the pipeline penetrates the deep cooling mechanism to be cooled and then is connected with an adsorption component filled with the adsorbing agent, and the adsorption component is provided with an outlet. By the device and the method for removing chlorosilane in polycrystalline silicon tail gas, chlorosilane in the tail gas can be removed, convenience and effectiveness in operation are achieved, a detection device can be protected in detection of trace hydrogen phosphide gas content in the tail gas, the service life of the detection device is prolonged,and detection cost is reduced.

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