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发明授权
CN109461797B 一种具有低电阻率P型层的LED外延结构及其生长方法 有权 质押

一种具有低电阻率P型层的LED外延结构及其生长方法
摘要：
本发明提供一种LED外延结构的生长方法，包括高温处理蓝宝石衬底、生长低温缓冲GaN层、生长不掺杂GaN层、生长掺杂Si的N型GaN层、生长多量子阱发光层、生长P型AlGaN层、生长P型GaN层以及退火降温步骤；在生长P型GaN层时，依次经过900℃预处理、870～1000℃升温生长P型GaN‑1层、退火处理和1000～900℃降温生长P型GaN‑2层过程；P型GaN‑1层和P型GaN‑2层的厚度相等且均为25～100nm，所含氮原子与镓原子的摩尔比控制为1400:1，Mg的掺杂浓度为1E19～1E20atoms/cm3。本发明降低了P型层的电阻率，提高了LED发光强度，使外延层表面变得平整。
摘要（英）：

The invention provides a growth method of an LED epitaxial structure. The growth method comprises the following steps: treating a sapphire substrate at high temperature, growing a low-temperature buffer GaN layer, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multiple-quantum well luminescent layer, growing a P-type AlGaN layer, growing a P-type GaN layer and annealing and cooling; when growing the P-type GaN layer, growing P-type GaN-2 layer by pretreating at 900 DEG C, growing the P-type GaN-1 layer by warming at 870-1000 DEG C, and performing annealing treatment and cooling at 1000-900 DEG C in order, wherein the thicknesses of the P-type GaN-1 layer and the P-type GaN-2 layer are equal and are 25-100nm, and the molar ratio of the contained nitrogen atom and the gallium atom is controlled at 1400: 1, and the doping concentration of Mg is 1E19-1E20atoms/cu.cm. The resistivity of the P-type layer is reduced, the LED luminescent intensity is improved, andthe epitaxial layer surface becomes smooth.

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