知搜-全球专利检索

  1. Login
  2. Sign Up
Invention Publication
CN109314130A 绝缘栅极功率半导体器件以及用于制造这种器件的方法 有权 转让

绝缘栅极功率半导体器件以及用于制造这种器件的方法
Abstract:
绝缘栅极功率半导体器件(1)在发射极侧(22)和集电极侧(27)之间具有(n-)掺杂漂移层(5)。p掺杂保护枕(8)覆盖沟槽栅极电极(7、7')的沟槽底部(76)。在增强层深度(97)中具有最大增强层掺杂浓度的n掺杂增强层(95)将基极层(4)与漂移层(5)分离。具有最大等离子体增强层掺杂浓度的n掺杂等离子体增强层(9、9')覆盖保护枕(8)和沟槽栅极电极(7、7')之间的边缘区域。n掺杂浓度从最大增强层掺杂浓度朝向等离子体增强层(9、9')减小，并且n掺杂浓度从最大等离子体增强层掺杂浓度朝向增强层(95)减小，使得n掺杂浓度在增强层(95)和等离子体增强层(9、9')之间具有局部掺杂浓度最小值。
Abstract(English):

An insulated gate power semiconductor device (1) has an (n-) doped drift layer (5) between an emitter side (22) and a collector side (27). A p doped protection pillow (8) covers a trench bottom (76) of a trench gate electrode (7, 7'). An n doped enhancement layer (95) having a maximum enhancement layer doping concentration in an enhancement layer depth (97) separates the base layer (4) from the drift layer (5). An n doped plasma enhancement layer (9, 9') having a maximum plasma enhancement layer doping concentration covers an edge region between the protection pillow (8) and the trench gate electrode (7, 7'). The n doping concentration decreases from the maximum enhancement layer doping concentration towards the plasma enhancement layer (9, 9') and the n doping concentration decreases fromthe maximum plasma enhancement layer doping concentration towards the enhancement layer (95) such that the n doping concentration has a local doping concentration minimum between the enhancement layer (95) and the plasma enhancement layer (9, 9').

Public/Granted literature
Patent Agency Ranking
0/0