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发明授权
CN108682674B 三维存储器的制备方法及半导体结构的制备方法 有权

三维存储器的制备方法及半导体结构的制备方法
摘要：
一种三维存储器的制备方法，包括在衬底上形成由第一层和第二层交替堆叠形成的第一叠层；形成垂直贯穿该第一叠层且到达该衬底的第一沟道孔；在该第一沟道孔内形成牺牲部，并使该牺牲部与该第一沟道孔的侧壁和底部之间形成空腔；在该第一叠层上形成由第三层和第四层交替堆叠形成的第二叠层；形成垂直贯穿该第二叠层且到达该牺牲部的第二沟道孔；去除该牺牲部。本发明提供的三维存储器的制备方法，由于设置了牺牲部，并使得牺牲部与沟道孔的侧壁和底部之间形成空腔，因而可以使得牺牲部的材料较少，使得牺牲部较易制作和去除，并缓解由牺牲部材料引气的污染和应力问题。
摘要（英）：

A method of fabricating a three-dimensional memory comprises steps of: forming a first stack formed by alternately stacking a first layer and a second layer on a substrate; forming a first channel hole penetrating through the first stack and reaching the substrate; forming a sacrificial portion in the first channel hole, and forming a cavity between the sacrificial portion and a sidewall and a bottom portion of the first channel hole; forming a second stack by alternately stacking a third layer and a fourth layer on the first stack; forming a second channel hole penetrating through the secondstack and reaching the sacrificial portion; and removing the sacrificial portion. The method for fabricating the three-dimensional memory provided by the present invention arranges the sacrificial portion, and forms the cavity formed between the sacrificial portion and the sidewall and the bottom portion of the channel hole, so that the material of the sacrificial portion can be made less, the sacrificial portion is easier to produce and remove, and the contamination and stress problems caused by the material of the sacrificial portion are solved.

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