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发明授权
CN108648997B 共振隧穿二极管晶圆结构的制备方法 有权 转让

共振隧穿二极管晶圆结构的制备方法
摘要：
本发明涉及一种共振隧穿二极管晶圆结构的制备方法，包括如下步骤：提供衬底；在衬底上依次层叠沉积的第一重掺杂InGaAs层、InP层、第一AlAs势垒层、InGaAs势阱层、第二AlAs势垒层和第二重掺杂InGaAs层；在所述第二重掺杂InGaAs层上沉积金属图形，形成第二欧姆接触；在金属图形以外的区域，先用可刻蚀InGaAs材料和AlAs材料、但不刻蚀InP材料的第一刻蚀液从第二重掺杂InGaAs层刻蚀至InP层，再用可刻蚀InP材料、但不刻蚀InGaAs材料和AlAs材料的第二刻蚀液刻蚀至第一重掺杂InGaAs层；在经刻蚀处理后的第一重掺杂InGaAs层上沉积金属形成第一欧姆接触。
摘要（英）：

The present solution relates to a preparation method for a resonant-tunneling diode wafer structure, comprising the following steps: providing a substrate; depositing in sequential layers on the substrate a first heavily-doped InGaAs layer, an InP layer, a first AlAs barrier layer, an InGaAs potential well layer, a second AlAs barrier layer, and a second heavily-doped InGaAs layer; depositing a metal pattern on the second heavily-doped InGaAs layer to form a second ohmic contact; on a region outside the metal pattern, first using a first etching liquid able to etch InGaAs material and AlAs material, but not able to etch InP material to etch from the second heavily-doped InGaAs layer to the InP layer, and then using a second etching liquid able to etch InP material, but not able to etch InGaAs material or AlAs material to etch to the first heavily-doped InGaAs layer; and depositing a metal on the etched first heavily-doped InGaAs layer to form a first ohmic contact.

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