The invention relates to the technology of semiconductors, in particular to an optical control thyristor with a deep N+ hole current blocking layer. The invention provides a design example of the optical control thyristor with the deep N+ hole current blocking layer. By changing a hole current circulation path, hole current is allowed to relieving a current centralization region in the device around a current centralization region on the left side of a cathode so as to allow the current distribution is quite even, thereby improving current resisting rising rate of the device. In addition, dueto the own characteristics, adjustment is performed according to the specific designing scheme of cellular. The beneficial effects are that an LTT device design of the deep N+ blocking layer is provided, so an invalidation problem of a conventional LTT device caused by centralization of current of the left side region of the main cathode is solved. Meanwhile, manufacturing technology which is thesame as that of the conventional device is provided. The thyristor is especially suitable for an optical control thyristor with big pulse power application and with high peak value current ability andhigh current increasing ability.