The present invention relates to a composition for etching and a method for manufacturing a semiconductor device including an etching process using the composition for etching. The composition for etching comprises: any one first additive selected from the group consisting of a first inorganic acid, a phosphorous acid, an organic phosphite, hypophosphite, and a mixture thereof; and a solvent. Thecomposition for etching is an etching composition with high selectivity which can selectively remove a nitride film while minimizing an etching rate of an oxide film and does not cause problems such as generation of particles which adversely affects device characteristics.