A method of producing a SiC wafer that achieves an increase in productivity is provided. The method for producing the SiC wafer includes the following steps: a step for forming a modified portion, positioning a condensed spot (FP) of a pulsed laser beam (LB) having a wavelength that is transparent to single crystal SiC at a depth from the first surface (52) of the SiC ingot (50), wherein the depthis corresponding to the thickness of the SiC wafer to be formed, the SiC crystal ingot (50) is irradiated with pulsed laser light (LB), and the modified portion (60) with SiC separated into Si and Cis formed on the c-plane; a step for forming a peeling layer, continuously forming a reforming portion (60), and forming a crack (62) isotropically on the c-plane from the modified portion (60) in order to form a peeling layer (64) for peeling the SiC wafer from the SiC ingot (50); and a wafer forming step, peeling a part of the SiC ingot (50) off using the peeling layer (64) as the interface in order to form a SiC wafer (66).