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CN108133891A 一种沟槽型IGBT及其制备方法 无效 - 驳回

一种沟槽型IGBT及其制备方法
摘要：
本发明提供了一种沟槽型IGBT及其制备方法，所述制备方法包括向N型衬底中与沟槽栅结构正下方对应的N-漂移区注入P型离子，形成浮置P区；分别在N型衬底的正面和背面淀积金属层，形成发射极和集电极；所述沟槽型IGBT采用上述制备方法制造。与现有技术相比，本发明提供的一种沟槽型IGBT及其制备方法，浮置P区的空穴可以复合掉部分沟槽型IGBT导通过程中的电子，降低沟槽型IGBT的饱和电流，改善沟槽型IGBT的短路特性，改善沟槽下方电场分布，减小沟槽下方电场的集中，从而增强其电压耐受能力。
摘要（英）：

The invention provides a groove-type IGBT and a preparation method thereof. The preparation method comprises the following steps: injecting P-type ions into an N-drift region right under a groove gatestructure in an N-type substrate to form a floating P region; and depositing a metal layer on the front surface and back surface of the N-type substrate to form an emitter electrode and a collector electrode respectively. The groove-type IGBT is prepared through the preparation method above. Compared with the prior art, according to the groove-type IGBT and the preparation method thereof, holes in the floating P region can recombine a part of electrons of the groove-type IGBT in the conduction process, thereby reducing saturation current of the groove-type IGBT, improving short circuit characteristic of the groove-type IGBT, improving electric field distribution under a groove, reducing concentration of an electric field under the groove and enhancing voltage endurance.

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