The invention provides a low on-stage voltage drop IGBT (Insulated Gate Bipolar Transistor) and a control method and a manufacturing method thereof. The low on-stage voltage drop IGBT comprises a gridelectrode, an emitting electrode, a control electrode and a collecting electrode, wherein the grid electrode, the emitting electrode and the control electrode are deposited in an active region of anN-type substrate; and the collecting electrode is deposited in a P+ collector region of the N-type substrate. The control method comprises that the operating mode of the low on-stage voltage drop IGBTis determined according to a control state thereof. Compared with the prior art, the low on-state voltage drop IGBT and the control method and the manufacturing method thereof provided by the invention have the advantages that hole circulation is effectively suppressed through a voltage value of the control electrode, so that the storage capacity of holes in an N- region is increased, and the on-state loss of the IGBT is reduced.