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发明授权
CN108010843B 一种利用极化掺杂制备增强型GaN基晶体管的方法 有权 转让

一种利用极化掺杂制备增强型GaN基晶体管的方法
摘要：
本发明公开了一种通过极化掺杂的方法制备增强型GaN基晶体管的方法。利用AlN和GaN的自发极化强度之间存在较大的差别，可以通过组分渐变的AlxGa1‑xN实现极化掺杂获得P型AlxGa1‑xN层。在GaN基材料外延生长Al组分逐渐减小的P‑型AlxGa1‑xN层，然后在P‑型AlxGa1‑xN层上生长AlxGa1‑xN层，AlxGa1‑xN层为Al组分x从0％‑10％增加到15％‑35％的组分渐变层或x为15％‑35％的组分固定层，再制作与AlxGa1‑xN层形成欧姆接触的源、漏极以及与P‑型AlxGa1‑xN层形成肖特基接触的栅极。通过改变P‑型AlxGa1‑xN的组分厚度可以调节器件开启电压，通过改变AlxGa1‑xN层的厚度和组分可以调节导通电阻，从而获得低导通电阻高开启电压的增强型GaN基晶体管。制作方法简单，无特殊工艺要求，可控性强。
摘要（英）：

Disclosed in the present invention is a method for preparing an enhancement mode GaN-based transistor using a polarization doping method. Utilizing a large difference between the intensities of spontaneous polarization of AlN and GaN, a P-type AlxGa1-x layer can be achieved by a composition graded AlxGa1-xN. A P-type AlxGa1-xN layer in which an Al component gradually decreases is epitaxially grown on a GaN-based material, and then a AlxGa1-xN layer is grown on the layer of the P-type AlxGa1-xN. The AlxGa1-xN layer is a composition graded layer in which the Al component x increases from 0%-10% to 15%-35% or a composition fixed layer with x of 15%-35%. Then, a source electrode and a drain electrode in ohmic contact with the AlxGa1-xN layer and a gate electrode in Schottky contact with the P-type AlxGa1-xN layer are fabricated. The turn-on voltage of a device can be adjusted by changing the component and the thickness of the P-type AlxGa1-xN, and the on-state resistance can be adjusted by changing the thickness and the component of the AlxGa1-xN layer, thereby obtaining an enhancement mode GaN-based transistor having low on-state resistance and high turn-on voltage. The manufacturing method is simple, there is no special process requirement, and the controllability is high.

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