Transition metal dry etch by atomic layer removal of oxide layers for device fabrication, and the resulting devices, are described. In an example, a method of etching a film includes reacting a surface layer of a transition metal species of a transition metal-containing film with a molecular oxidant species. The method also includes removing volatile fragments of the reacted molecular oxidant species to provide an oxidized surface layer of the transition metal species. The method also includes reacting the oxidized surface layer of the transition metal species with a molecular etchant. The method also includes removing the reacted oxidized surface layer of the transition metal species and the reacted molecular etchant by volatlilization.