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发明授权
CN107978513B 一种湿法制备薄膜方法 有权

一种湿法制备薄膜方法
摘要：
本发明公开一种湿法制备薄膜方法，包括：将溶质金属化合物溶解于有机溶剂中，得到前驱体溶液；根据所述前驱体溶液制备初始薄膜；对所述初始薄膜进行前期退火；前期退火完成后进行指定次数循环的水蒸气热处理，获得成品薄膜。采用本发明中的方法能够使水蒸气氧化退火处理过程中的水氧率保持恒定，从而提高有源层薄膜和绝缘层薄膜的质量，进一步提升薄膜晶体管的性能。
摘要（英）：

The invention discloses a wet film preparation method. The method comprises that a solute metal compound is dissolved in an organic solvent to obtain a precursor solution; an initial film is preparedaccording to the precursor solution; early-stage annealing is carried out on the initial film; and after early-stage annealing, water vapor heat treatment cycled for specific times is carried out to obtain a finished film. Thus, the water oxygen rate in the water vapor oxidized annealing process is kept constant, the quality of the active-layer film and the insulating-layer film are improved, andthe performance of thin film transistors is improved further.

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