Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. The power semiconductor device is provided with: a semiconductor element 5; an insulating substrate 10 having an electrode layer 1 to which the semiconductor element is bonded; an external wiring line 7 which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion 7d for external connection, said end portion being bent toward theupper surface; and a frame member 8 which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion 8b that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions 7b that protrude toward the semiconductor element.