知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN107768517A 包括二维材料的相变存储器件、操作其的方法和相变层 审中-实审

包括二维材料的相变存储器件、操作其的方法和相变层
摘要：
公开包括二维材料的相变存储器件、操作其的方法和相变层。所述相变存储器件可包括包含二维(2D)材料的相变层。所述相变层可包括包含一个或多个2D材料层的层状结构。所述相变层可提供在第一电极和第二电极之间，并且所述2D材料层的一个或多个的至少一部分的相可基于通过所述第一电极和所述第二电极施加到所述相变层的电信号而改变。所述2D材料可包括基于硫属化物的材料或磷烯。所述2D材料可具有大于或等于约200℃且低于或等于约500℃的相变温度。
摘要（英）：

A phase change memory device may include a phase change layer that includes a two-dimensional (2D) material. The phase change layer may include a layered structure that includes one or more layers of2D material. The phase change layer may be provided between a first electrode and a second electrode, and the phase of at least a portion of one or more of the layers of 2D material may be changed based on an electrical signal applied to the phase change layer through the first electrode and the second electrode. The 2D material may include a chalcogenide-based material or phosphorene. The 2D material may be associated with a phase change temperature that is greater than or equal to about 200DEG C and lower than or equal to about 500 DEG C.

0/0