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发明公开
CN107453724A 中压器件工作在低压下的低功耗高增益全差分运算放大器 审中-实审

中压器件工作在低压下的低功耗高增益全差分运算放大器
摘要：
本发明公开了一种中压器件工作在低压下的低功耗高增益全差分运算放大器，其中的第一PMOS管的源极、第二PMOS管的源极、第三PMOS管的源极和第四PMOS管的源极均连接于高电位，第一PMOS管的栅极、第一PMOS管的漏极、第二PMOS管的漏极、第三PMOS管的栅极和第一NMOS管的漏极相互连接，第四PMOS管的栅极、第四PMOS管的漏极、第三PMOS管的漏极、第二PMOS管的栅极和第二NMOS管的漏极相互连接，第一NMOS管的源极和第二NMOS管的源极用于连接低电位，第一NMOS管的栅极和第二NMOS管的栅极分别作为全差分运算放大器的两个输入端，第一NMOS管的漏极和第二NMOS管的漏极分别作为全差分运算放大器的两个输出端。本发明架构简单、易于实现、节省版图、成本低廉。
摘要（英）：

The invention discloses a full-difference operation amplifier with low energy consumption and high gain working under low voltage of a medium-voltage device. The source electrodes of a first PMOS transistor, a second PMOS transistor, a third PMOS transistor and a fourth PMOS transistor are all connected to high potential, the grid electrode and drain electrode of the first PMOS transistor, the drain electrode of the second PMOS transistor, the grid electrode of the third PMOS transistor and the drain electrode of the first PMOS transistor are in connection, the grid electrode and the drain electrode of the fourth PMOS transistor, the drain electrode of the third PMOS transistor, the grid electrode and the drain electrode of the second PMOS transistor are in connection, the source electrodes of the first PMOS transistor and the second PMOS transistor are used for being connected with low potential, the grid electrodes of a first NMOS transistor and a second NMOS transistor are used as the two input ends of the full-difference operation amplifier respectively, and the drain electrodes of the first NMOS transistor and the second NMOS transistor are used as the two output ends of full-difference operation amplifier respectively. The full-difference operation amplifier has the advantages that the framework is simple, achievement is easy, layouts are saved, and the cost is low.

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