The present disclosure relates to a solid-state image capture element and an electronic device in which leakage of charge into adjacent pixels can be prevented. A plurality of pixels performs photoelectric conversion with respect to light incident on a back surface via different on-chip lenses for the respective pixels. A pixel separation wall is formed between adjacent pixels, and comprises a front surface trench which is a trench formed on a front surface, and a back surface trench which is a trench formed on a back surface. The wiring layer is provided on the front surface. The present disclosure may be applied in a back-illuminated CMOS image sensor, for example.