The invention relates to a resistive random access memory for inhibiting the excessive growth of a silver conductive channel and a preparation method thereof. The resistive random access memory comprises a bottom electrode, a resistance transition layer, a silver solid electrolyte material buffer layer, and a top electrode. The resistance transition layer is arranged on the bottom electrode. The silver solid electrolyte material buffer layer is arranged on the resistance transition layer. The top electrode is arranged on the silver solid electrolyte material buffer layer. The preparation method of the resistive random access memory is simple, and the cost of batch production is low. According to the device prepared in the invention, the operation voltage is reduced, the channel excessive growth in starting is inhibited, the output quality is improved, the circulation uniformity is improved, and the device can be applied to the fields of resistive random access memories and artificial neural networks.