The embodiment of the invention provides a laser chip. The laser chip comprises a substrate, a first active region and a second active region, wherein the first active region and the second active region are arranged the substrate. The laser chip further comprises a first grating arranged on the first active region and a second grating arranged on the second active region. Light emitted by the first active region undergoes Bragg reflection at the first grating. Light emitted by the second active region undergoes Bragg reflection at the second grating. The first grating and the second grating are not parallel, and have different end face phases after cleavage. A first light emitting unit and a second light emitting unit have different single mode rejection ratio SMSR and yield. The laser chip can screen the light emitting unit which is superior in performance.