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发明授权
CN107230608B 等离子体处理装置 有权

等离子体处理装置
摘要：
本发明提供一种等离子体处理装置，包括：筒形电极，具有作为设有开口部的一端的下端与作为被封闭的另一端的上端，内部导入工艺气体，通过施加电压而使所述工艺气体等离子体化；以及作为具有开口的真空容器的腔室，上端经由绝缘构件而安装于开口的筒形电极在腔室的内部延伸存在。而且，等离子体处理装置还包括：作为搬送部的旋转平台，将利用工艺气体受到处理的工件搬送至筒形电极的开口部之下；护罩，隔着间隙覆盖在真空容器的内部延伸存在的筒形电极；以及间隔件，设置于筒形电极与护罩的间隙中且包含绝缘材料。本发明通过在筒形电极的侧壁与护罩的间隙中配置间隔件，能够防止筒形电极与护罩的接触而可稳定地进行膜处理。
摘要（英）：

A plasma processing apparatus includes a cylindrical electrode which has a lower end provided with an opening, an upper end that is a closed end, in which a process gas is introduced, and which obtains a plasma process gas upon application of the voltage, and a chamber that is a vacuum container provided with an opening. The cylindrical electrode, which has the upper end attached to the opening of the chamber via an insulation material, is extended in the chamber. The plasma processing apparatus also includes a rotation table carrying a workpiece to be processed by the process gas to a space below the opening of the cylindrical electrode, a shield covering the cylindrical electrode extended inside the chamber via a gap, and a spacer installed in the gap, and formed of an insulation material.

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