The invention discloses a method for plating an anti-reflection membrane by use of PECVD. The method comprises following steps of (1), putting a to-be-processed silicon sheet into a quartz pipe of a PECVD device, carrying out vacuumization and temperature rising, injecting reaction gas so as to form an atmosphere of the reaction gas in the quartz pipe, adjusting power supply power of the PECVD device to P1, carrying out an indirect-method based film plating on the surface of the to-be-processed silicon sheet, and deposing a base layer anti-reflection membrane on the surface of the silicon sheet, wherein the P1 is larger than 40KHZ; and (2) adjusting the power supply power of the PECVD to P2, carrying out direct-method based film plating, continuing to depose an anti-reflection membrane on the base layer anti-reflection membrane, wherein the P2 is smaller than or equal to 40KHZ, turning off of a power supply and stopping injecting the reaction gas so as to finish the plating of the anti-reflection membrane. An experiment shows that the uniformity of the membrane thickness of the anti-reflection membrane is quite good; recombination rate of minority carries on the surface can be reduced; lifetime of the minority carriers is prolonged; and photoelectric conversion efficiency of a cell sheet is improved.