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CN107078464A 用于对层序列进行结构化的方法和半导体激光器设备 失效 - 权利终止

用于对层序列进行结构化的方法和半导体激光器设备
Abstract:
提出一种用于对层序列进行结构化的方法以及一种半导体激光器设备。在该方法中，通过两个等离子刻蚀方法在层序列(10)中产生至少一个沟槽(4)。半导体激光器设备包括：层序列(10)，所述层序列借助半导体材料形成；和层序列(10)中的两个沟槽(4)，所述沟槽侧向地对脊型波导(30)限界，其中每个沟槽(4)在其背离脊型波导(30)的一侧上由层序列(10)的区域(A)限界。
Abstract(English):

The invention relates to a method for patterning a sequence of layers and to a semiconductor laser device. In said method, at least one trench (4) is created in the sequence of layers (10) by two plasma etching methods. The semiconductor laser device comprises a sequence of layers (10), which is formed using a semiconductor material, and two trenches (4) in the sequence of layers (10), said trenches laterally delimiting a ridge waveguide (30). Each of the trenches (4) is delimited on the side facing away from the ridge waveguide (30) by a region (A) of the sequence of layers (10).

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