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发明公开
CN106952824A 一种低温多晶硅薄膜晶体管的制作方法 无效 - 驳回

一种低温多晶硅薄膜晶体管的制作方法
摘要：
本发明实施例提供一种低温多晶硅薄膜晶体管的制作方法，包括：提供一基板，所述基板上形成多晶硅层，所述多晶硅层包括第一区域、第二区域和第三区域；在所述第一区域及所述第二区域上涂布光刻胶，并经过曝光、第一次显影形成光刻胶层；以所述光刻胶层为遮挡进行第一次掺杂工艺，以在所述第三区域上形成重掺杂区域；对所述光刻胶层进行第二次显影，以使得所述第二区域露出；以第二次显影后的光刻胶层为遮挡进行第二次掺杂工艺，以在所述第二区域上形成轻掺杂区域。本发明的方法可以节省一道黄光及光刻胶的剥离制程，降低了工艺成本。
摘要（英）：

The embodiment of the invention provides a fabrication method of a low-temperature poly-silicon thin film transistor. The fabrication method comprises the steps of providing a substrate, wherein a poly-silicon layer is formed on the substrate and comprises a first region, a second region and a third region; coating photoresist on the first region and the second region, and performing exposure and first developing to form a photoresist layer; performing a first doping process by taking the photoresist layer as shading so as to form a heavy-doping region on the third region; performing second developing on the photoresist layer so that the second region is exposed; and performing a second doping process by taking the photoresist layer after the second developing as shading so as to form a light doping region on the second region. By the method, a process of yellow light and photoresist stripping can be omitted, and the process cost is reduced.

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