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发明授权
CN106876319B 存储元件的制造方法 有权

存储元件的制造方法
摘要：
本发明提供一种存储元件的制造方法，包括提供具有第一区与第二区的衬底。形成第一介电层于第一区的衬底上。形成导体层于第二区的衬底上。导体层的顶面低于第一介电层的顶面。形成第二介电层于衬底上。移除部分第二介电层与部分导体层，以形成第一开口于第二区的导体层与第二介电层中。第一开口暴露衬底的表面。移除部分第二区的衬底，以形成沟渠于第二区的衬底中。形成第三介电层于沟渠以及第一开口中。本发明可减少工艺步骤，以减少工艺成本。
摘要（英）：

A method of fabricating a memory device includes providing a substrate having a first region and a second region. A first dielectric layer is formed on the substrate in the first region. A conductive layer is formed on the substrate in the second region. A top surface of the conductive layer is lower than a top surface of the first dielectric layer. A second dielectric layer is formed on the substrate. A portion of the second dielectric layer and a portion of the conductive layer are removed to form a first opening in the conductive layer and the second dielectric layer in the second region. The first opening exposes a surface of the substrate. A portion of the substrate in the second region is removed to form a trench in the substrate in the second region. A third dielectric layer is formed in the trench and the first opening.

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