The invention provides a double-sided terminal structure, a reverse conducting semiconductor device and a fabrication method of the reverse conducting semiconductor device. The double-sided terminal structure comprises a substrate, a front-surface terminal region and a back-surface terminal region, wherein the front-surface terminal region is arranged on an upper surface of the substrate, and the back-surface terminal region is arranged on a lower surface of the substrate and comprises a plurality of first conductive ion doping regions which are interrupted. The reverse conducting semiconductor device comprises the double-sided terminal structure. Compared with the prior art, the double-sided terminal structure, the reverse conducting semiconductor device and the fabrication method of the reverse conducting semiconductor device, provided by the invention, have the advantages that the terminal structure can be used for improving the integral voltage resistance on a condition that the terminal area is fixed, the efficiency of the terminal structure is improved, and the back-surface terminal process is compatible with a reverse conducting insulated gate bipolar transistor (IGBT) to a certain extent.