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发明授权
CN106653595B 一种等离子刻蚀设备 有权

一种等离子刻蚀设备
摘要：
本发明公开了一种等离子刻蚀设备，包括反应腔室，反应腔室内设置相对平行放置的正电极板和负电极板，反应腔室左侧设置有气体入口，反应腔室右下侧处设置有气体出口和掩膜版；所述负电极板设置于反应腔室的上方，所述负电极板和掩膜版相互连接，掩膜版位于负电极板的下方，掩膜版的版面朝下；所述正电极板设置于反应腔室的下方，与掩膜版相对。本发明掩模版的表面朝下，颗粒在处理过程中不会落下，避免了图形未被刻蚀出或图形未被完全刻蚀的发生。
摘要（英）：

The invention discloses plasma etching equipment, which comprises a reaction chamber, a positive electrode plate and a negative electrode plate, wherein the positive electrode plate and the negative electrode plate are arranged in the reaction chamber in parallel; a gas inlet is arranged in the left side of the reaction chamber; a gas outlet and a mask are arranged at the lower right side of the reaction chamber; the negative electrode plate is arranged at the upper part of the reaction chamber and is connected with the mask; the mask is located at the lower part of the negative electrode plate and the surface of the mask is downward; and the positive electrode plate is arranged at the lower part of the reaction chamber and is opposite to the mask. The surface of the mask is downward, particles do not fall off in the treatment process, and the condition that a pattern is not etched or the pattern is not completely etched is avoided.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065 .......等离子腐蚀；活性离子腐蚀
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