The invention discloses a growing method for a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the following steps: growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type GaN layer, an N-type inserting layer, an active layer, an electron barrier layer and a P-type GaN layer in sequence on a substrate, wherein the growth temperature of the N-type GaN layer is greater than that of the N-type inserting layer which is greater than that of the active layer; the N-type inserting layer comprises a first sublayer, a second sublayer and a third sublayer which are laminated in sequence; the first sublayer is a superlattice structure formed by alternately laminating two GaN layers in which the doping concentrations of the N-type doping agents are different, and the doping concentration of the N-type doping agent in the first sublayer is smaller than that of the N-type doping agent in the N-type GaN layer; the second sublayer is an AlGaN layer or a superlattice structure formed by alternately laminating at least three AlGaN layers and at least three GaN layers; and the third sublayer is an InGaN layer. The N-type inserting layer in the invention plays a buffer role, and is beneficial for the growth of the active layer.