知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN106549017A 集成电路装置及其制造方法 审中-实审

集成电路装置及其制造方法
摘要：
提供了集成电路装置及其制造方法。所述集成电路装置包括：第一栅极堆叠件，形成在第一高介电层上并包括第一含逸出功调节金属结构；第二栅极堆叠件，形成在第二高介电层上并包括具有比第一含逸出功调节金属结构的氧含量大的氧含量的第二含逸出功调节金属结构。
摘要（英）：

Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

0/0