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Invention Publication
CN106463576A 氮化物半导体发光元件 有权

氮化物半导体发光元件
Abstract:
本发明提供一种抑制深能级发光、提高单色性进而发光效率好的氮化物半导体发光元件。氮化物半导体发光元件在n型氮化物半导体层与p型氮化物半导体层之间具有发光层，上述n型氮化物半导体层包含AlnGa1－nN(0＜n≤1)，所包含的C浓度为1×1017/cm3以下。
Abstract(English):

Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains A1nGa1-nN (0

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