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发明公开
CN106409889A 半导体元件 有权

半导体元件
摘要：
本发明公开一种半导体元件，其包含一基底以及一栅极结构设于基底上，其中栅极结构包含一高介电常数介电层设于基底上以及一底部金属阻隔层设于高介电常数介电层上，该底部金属阻隔层包含一上半部、一中半部以及一下半部，且上半部为一富氮部分而中半部及下半部各为一富钛部分。
摘要（英）：

The invention discloses a semiconductor component. The semiconductor component comprises a substrate and a gate structure arranged on the substrate. The gate structure comprises a high-dielectric-constant dielectric layer arranged on the substrate and a bottom metal barrier layer arranged on the high-dielectric-constant dielectric layer. The bottom metal barrier layer comprises an upper half portion, a middle half portion and a lower half portion. The upper half portion is a nitrogen-enriched portion, and the middle half portion and the lower half portion are titanium-enriched portions.

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