The invention discloses a nonvolatile D flip-flop circuit based on a memristor. The nonvolatile D flip-flop circuit comprises the memristor ME, a fixed value resistor R, a first MOS (Metal Oxide Semiconductor) tube, a second MOS tube, a third MOS tube, a first inverter N1, a second inverter N2, a third inverter N3 and a bleeder circuit, wherein the bleeder circuit is formed in a way that the memristor and the fixed value resistor R are connected in series. The nonvolatile D flip-flop circuit mainly utilizes the nonvolatility of the memristor and the characteristic that a resistance value is changed along with charges which flow through the memristor to realize the latch and trigger function of the flip-flop. The D flip-flop circuit constructed by the invention has the functions of a traditional flip-flop, has the characteristics of high response speed and nonvolatility, and is suitable for fields which request a high response speed and an unstable power supply, and meanwhile, the nonvolatile D flip-flop circuit provides an experiment reference for researching the nonvolatile D flip-flop circuit based on the memristor.