An insulated gate bipolar transistor structure comprises collector metal, a P-type collector region and an N-type base region. The surface of the N-type base region is provided with an N-type carrier storage layer and a groove gates. The groove gates divide the N-type carrier storage layer into strips. The surface of the strip-shaped N-type carrier storage layer is uniformly provided with block-shaped P-type body regions. The block-shaped carrier storage layer is provided with a second-type gate oxide layer connected to a first-type gate oxide layer. The second-type gate oxide layer is provided with a second polysilicon gate connected to a first polysilicon gate. The surfaces of the block-shaped P-type body regions are provided with P-type source regions and N-type source regions and are connected to emitter metal. The structure is characterized in that the surface of the block-shaped carrier storage layer is provided with light-doped shallow P-wells connected to the block-shaped P-type body regions. When the device in conduction, a grid electrode applies a positive grid voltage which is completely exhausted by the light-doped shallow P-wells to realize an injection efficiency enhance effect and enable the device to have a relatively small conduction pressure drop. When the device is turned off, the light-doped shallow P-wells are not completely exhausted, and conductive channels form to accelerate the device turn-off speed.