The invention discloses an IBC cell manufacturing method. According to the IBC cell manufacturing method, a suede light-trapping structure is prepared on the front surface (light-receiving surface) of a silicon chip through the alkali etching process. An emitter electrode and a back-surface field are prepared on the back surface of the silicon chip through the ion implantation process. An ion beam is selectively doped within the specific region of the silicon chip in the scanning manner. Finally, an emitter electrode and a back-surface field, of a finger-shaped structure, are formed. Based on the PECVD method, a passivating layer or an antireflective film is formed on the front and back surfaces of the silicon chip. The electrode is formed on the back surface of the silicon chip through the silk-screen printing process. Since patterns required for the emitter electrode and the back-surface field are directly prepared on the back surface of the silicon chip through the ion implantation process, the photolithography technique or other precision patterning techniques is not required. Therefore, the production process is simple and the production cost is lower.