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发明授权
CN105449063B 提高紫外LED紫外光纯度的结构及其方法 有权 质押

提高紫外LED紫外光纯度的结构及其方法
摘要：
本发明公开了一种提高紫外LED紫外光纯度的结构，包括Mg掺杂氮化镓层、活性层、高纯度不掺杂氮化镓层、Si掺杂GaN层、缓冲层和衬，其中，所述缓冲层生长在所述衬底上部；所述Si掺杂GaN层生长在所述缓冲层上部；所述活性层生长在所述高纯度不掺杂氮化镓层上部；所述Mg掺杂氮化镓层生长在所述活性层上部。本发明所述提高紫外LED紫外光纯度的结构及其方法通过引入高纯度不掺杂的氮化镓层，降低活性层中Mg元素的浓度，进而降低紫外LED中蓝色光的发光强度，提高紫外LED的紫外光纯度。
摘要（英）：

The invention discloses a structure for raising the purity of UV LED ultraviolet light. The structure comprises an Mg doped gallium nitride layer, an active layer, a high purity undoped gallium nitride layer, an Si doped GaN layer, a buffer layer and a lining, wherein the buffer layer is grown on the upper portion of the substrate. The Si doped GaN layer is grown on the upper portion of the buffer layer. The active layer is grown on the upper portion of the high purity undoped gallium nitride layer. The Mg doped gallium nitride layer is grown on the active layer. According to the structure and method for raising the purity of UV LED ultraviolet light, through introducing of the high purity undoped gallium nitride layer, the concentration of Mg elements in the active layer is reduced; the luminescence intensity of blue light in a UV LED can be further reduced; and the ultraviolet light purity of the UV LED can be raised.

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