The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor light emitting element. The semiconductor light emitting element comprises a substrate, and a nitride buffer layer, an n-type layer, a shallow quantum well layer, a multiple quantum well layer and a p-type layer formed on the substrate sequentially. The semiconductor light emitting element is characterized in that a composite structure layer is also inserted between the shallow quantum well layer and the multiple quantum well layer; the composite structure layer at least comprises a p-type doped GaN layer, an n-type doped GaN layer, and an isolation layer located between the p-type doped GaN layer and the n-type doped GaN layer. The feature that p-type impurities in the composite structure layer are migrated to the shallow quantum well layer and the multiple quantum well layer is used, light emitting of the shallow quantum well layer and the composite structure layer is promoted while the light-emitting strength of the multiple quantum well layer is enhanced, the light outgoing area of the semiconductor element is increased, and the light-emitting strength is further enhanced.