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发明公开
CN105304630A 半导体器件及其制造方法 失效 - 权利终止

半导体器件及其制造方法
摘要：
本发明公开了半导体器件及其制造方法。半导体器件包括衬底以及形成在衬底上的MOS晶体管。MOS晶体管包括在衬底上形成的第一栅极绝缘层，在第一栅极绝缘层的一侧形成并且厚度大于第一栅极绝缘层的第二栅极绝缘层，在第一栅极绝缘层和第二栅极绝缘层上形成的栅极，邻近第一栅极绝缘层的源区，以及邻近第二栅极绝缘层的漏区。
摘要（英）：

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a substrate and a MOS transistor formed on the substrate. The MOS transistor includes a first gate insulating layer formed on the substrate, a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness thicker than that of the first gate insulating layer, a gate electrode formed on the first gate insulating layer and the second gate insulating layer, a source region adjacent to the first gate insulating layer, and a drain region adjacent to the second gate insulating layer.

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