知搜-全球专利检索

  1. 登录
  2. 注册
发明授权
CN105280631B 瞬时电压抑制元件及其制造方法 失效 - 权利终止

瞬时电压抑制元件及其制造方法
摘要：
本发明提出一种瞬时电压抑制(transient voltage suppression,TVS)元件及其制造方法。TVS元件限制其中的两端点间的压差不超过一限制电压。TVS元件形成于半导体基板、P型第一外延层、与第二外延层依序堆叠所形成的堆叠基板中。在TVS元件中，第一PN二极管与齐纳二极管串联，并由第一浅沟槽隔绝区环绕；且第二PN二极管与串联的第一PN二极管及齐纳二极管并联，并由第二浅沟槽隔绝区环绕。其中，第一浅沟槽隔绝区与第二浅沟槽隔绝区自上表面延伸至第二外延层中，且未延伸至第一外延层。
摘要（英）：

The present invention discloses a transient voltage suppression (TVS) device and a manufacturing method thereof. The TVS device limits a voltage drop between two terminals thereof not to exceed a clamp voltage. The TVS device is formed in a stack substrate including a semiconductor substrate, a P-type first epitaxial layer, and a second epitaxial layer stacked in sequence. In the TVS device, a first PN diode is connected to a Zener diode in series, wherein the series circuit is surrounded by a first shallow trench isolation (STI) region; and a second PN diode is connected in parallel to the series circuit, wherein the second PN diode is surrounded by a second STI region. The first STI region and the second STI region both extend from an upper surface to the second epitaxial layer, but not to the first epitaxial layer.

公开/授权文献
0/0