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发明公开
CN105244414A 一种二硫化钼/硅异质结太阳能电池及其制备方法 失效 - 权利终止

一种二硫化钼/硅异质结太阳能电池及其制备方法
摘要：
本发明公开了一种二硫化钼/硅异质结太阳能电池及其制备方法，化学气相沉积（CVD）方法可制得大面积、均匀、高结晶的二硫化钼膜，该材料具有较高的载流子迁移率且带隙可调控，制备的二硫化钼/硅异质结太阳电池具有常温制备、工艺简单、成本低、光电转换效率高等特点，在降低器件成本的同时，能够实现太阳能的有效转换。
摘要（英）：

The invention discloses a molybdenum disulfide / silicon heterojunction solar energy cell and a preparation method thereof. The chemical vapor deposition method can be used in preparing uniform molybdenum disulfide film with large-area and high crystallinity degree. The molybdenum disulfide film has a relatively high carrier mobility and an adjustable band gap. The prepared molybdenum disulfide / silicon heterojunction solar energy cell has characteristics of normal temperature preparation, simple process, low cost and high photoelectric conversion efficiency, and can perform effective conversion of solar energy even when the cell cost is reduced.

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