The invention belongs to the semiconductor manufacturing field and discloses a manufacturing method for improving the quality of a SiGe source and drain area. The method includes the following steps that: an N-type silicon substrate with a gate formed thereon is provided, a groove to form the source and drain area is formed in the silicon substrate through etching; a SiGe buffer layer with low concentration Ge is formed in the groove through epitaxial growth; a SiGe main body layer with high concentration Ge is formed on the buffer layer through epitaxial growth; and a SiGe cap layer with low concentration Ge is formed on the buffer layer through epitaxial growth, and therefore, a PMOS source and drain area with SiGe can be formed. According to the manufacturing method for improving the quality of the SiGe source and drain area provided by the invention adopted, the SiGe cap layer with low concentration Ge is formed through epitaxial growth, so that the growth rate of the cap layer on the SiGe main body layer with high concentration Ge can be effectively increased, and therefore, the problem of poor coating performance of the cap layer on the <111> crystal surface of the SiGe main body layer can be solved, and process stability can be enhanced, and thus, the performance of a device can be improved.