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CN104953026A 蚀刻非挥发性金属材料的方法 有权

蚀刻非挥发性金属材料的方法
摘要：
一种蚀刻非挥发性金属材料的方法，特别是用于蚀刻带有含钌层的堆叠的方法，所述含钌层配置在硬掩膜的下方和带有针扎层的磁性隧道结(MTJ)堆叠的上方。所述硬掩膜被使用干法蚀刻进行蚀刻。所述含钌层被使用基于次氯酸盐和/或臭氧的化学物质进行蚀刻。所述MTJ堆叠被蚀刻。所述MTJ堆叠由电介质材料覆盖。所述针扎层紧接着所述MTJ覆盖被蚀刻。
摘要（英）：

A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.

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