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CN104916751A III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法 无效 - 撤回

III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法
摘要：
本发明提供一种III族氮化物半导体元件、p型接触结构、制作III族氮化物半导体元件的方法，氮化物半导体元件具有能够改善p型氮化物半导体区域与电极的物理性的接触的特性的结构。在电极与第一p型III族氮化物半导体层的接触的金属-半导体界面上形成界面势垒。以使第二p型III族氮化物半导体层内含应变的方式在第一p型III族氮化物半导体层与第三p型III族氮化物半导体层之间夹持第二p型III族氮化物半导体层。第二p型III族氮化物半导体层的应变使p型III族氮化物半导体叠层的能带结构变化。在基底的主面以50度以上且小于80度的范围的角度倾斜时，该能带结构的变化以在金属-半导体界面处降低界面势垒产生的势垒高度的方式发挥作用。
摘要（英）：

The invention provides a group III nitride semiconductor device, a p-type contact structure, and a method for fabricating group III nitride semiconductor device. The Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

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