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发明公开
CN104885220A 具有提升辐射抗扰度的集成电路 有权

具有提升辐射抗扰度的集成电路
摘要：
描述具有提升辐射抗扰度的集成电路。所述集成电路包括衬底；形成于所述衬底上且具有存储器单元的N型晶体管的P阱；及形成于所述衬底上且具有所述存储器单元的P型晶体管的N阱；其中所述N阱具有用于容纳所述P型晶体管的最小尺寸。
摘要（英）：

An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; a P-well formed on the substrate and having N-type transistors of a memory cell; and an N-well formed on the substrate and having P-type transistors of the memory cell; wherein the N-well has minimal dimensions for accommodating the P-type transistors.

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