知搜-全球专利检索

  1. 登录
  2. 注册
发明公开
CN104851937A 半导体装置 有权

半导体装置
摘要：
本发明提供一种半导体装置，提高半导体装置的特性。使用于半导体继电器的半导体装置构成为，具备形成于第1半导体岛区域的第1二极管、形成于第2半导体岛区域的第2二极管、覆盖第2半导体岛区域的遮光膜(多晶硅膜PS2)和将第1二极管与第2二极管电连接的配线Mb。并且，配线Mb配置成横越包围第2半导体岛区域的氧化硅膜OX的上方。另外，遮光膜位于配线Mb的下方，在与配线Mb的重叠区域具有缺口部N。这样，通过设置缺口部N，遮光膜的端部(线L1、线L2)错开配置。由此，能防止由于氧化硅膜OX上的凹部与遮光膜的阶梯而导致在配线Mb的整个宽度形成深凹部(G)，能防止配线Mb的断线。
摘要（英）：

A semiconductor device used for a semiconductor relay includes: a first diode; a second diode; an electric field shield film (polysilicon film PS2) for covering the second semiconductor island region, where the second diode is formed; and a wiring Mb for electrically connecting the first diode to the second diode. The wiring is arranged so as to cross above a silicon oxide film OX surrounding the second semiconductor island region. The electric field shield film is positioned below the wiring Mb, and has a cutout portion N in an overlapping region which overlaps the wiring Mb. By forming the cutout portion N, end portions (L1 and L2) of the electric field shield film is arranged to be shifted. Therefore, formation of a deep concave portion (G) which is based on a concave portion on the silicon oxide film and a step of the electric field shield film over the entire width of the wiring Mb can be prevented, and the disconnection of the wiring Mb can be prevented.

公开/授权文献
0/0