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CN104752163A 半导体器件的制造方法、程序及衬底处理装置 有权 转让

半导体器件的制造方法、程序及衬底处理装置
摘要：
本发明涉及高效率地除去喷头内的副产物、并抑制颗粒生成的半导体器件的制造方法、程序及衬底处理装置。本发明的半导体器件的制造方法，具有：成膜工序，通过喷头向处理室内的衬底上供给成膜气体和非活性气体，在所述衬底上形成膜；和堆积膜除去工序，在所述处理室内没有衬底的状态下，将温度比所述成膜工序时供给的所述非活性气体低的非活性气体供给到所述喷头，由此除去因所述成膜工序而堆积在所述喷头内的堆积膜。
摘要（英）：

Provided are a method of manufacturing semiconductor device, a program, and a substrate processing apparatus which are capable of efficiently removing a coproduct in a shower head and suppressing generation of particles. The method of manufacturing a semiconductor device includes forming a film on a substrate by supplying a film forming gas and an inert gas to the substrate in a processing chamber via a shower head, and removing a deposited film deposited in the shower head in by supplying to the shower head an inert gas, which has a temperature lower than that of the inert gas supplied in, into the shower head without the substrate loaded in the processing chamber.

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