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发明公开
CN104733286A 包含嵌入的剥落释放平面的Ⅲ族氮化物的受控剥落 失效 - 权利终止

包含嵌入的剥落释放平面的Ⅲ族氮化物的受控剥落
摘要：
本发明涉及包括嵌入的剥落释放平面的Ⅲ族氮化物的受控剥落。本发明提供包括嵌入的剥落释放平面的Ⅲ族氮化物的受控剥落。形成嵌入在Ⅲ族氮化物材料层内的剥落释放平面。与提供所述Ⅲ族氮化物材料层并且嵌入所述剥落释放平面的所述Ⅲ族氮化物材料部相比，剥落释放平面包括具有不同的应变、不同的结构和不同的组成的材料。剥落释放平面在Ⅲ族氮化物材料层之内提供削弱的材料平面区域，其在随后进行的剥落工艺期间可被用于将Ⅲ族氮化物材料的一部分从初始Ⅲ族氮化物材料层释放。特别地，在剥落工艺期间，在嵌入在初始Ⅲ族氮化物材料层内的剥落释放平面内发生裂缝萌生和传播。
摘要（英）：

The invention relates to controlled spalling of group III nitrides containing an embedded spall releasing plane, and provides a controlled spalling of group III nitrides containing an embedded spall releasing plane. A spall releasing plane is formed embedded within a Group III nitride material layer. The spall releasing plane includes a material that has a different strain, a different structure and a different composition compared with the Group III nitride material portions that provide the Group III nitride material layer and embed the spall releasing plane. The spall releasing plane provides a weakened material plane region within the Group III nitride material layer which during a subsequently performed spalling process can be used to release one of the portions of Group III nitride material from the original Group III nitride material layer. In particular, during the spalling process crack initiation and propagation occurs within the spall releasing plane embedded within the original Group III nitride material layer.

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