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发明授权
CN104715765B 磁阻传感器屏蔽 有权

磁阻传感器屏蔽
摘要：
本申请公开了磁阻传感器屏蔽。本文所公开的实施方式提供用于包括合成反铁磁(SAF)结构的磁阻(MR)传感器，SAF结构磁耦合到侧屏蔽元件。SAF结构包括至少一个由铁磁材料与耐火材料组成的合金的非晶磁性层。非晶磁性层可以与非磁性层接触并且反铁磁性耦合到与非磁性层的相反表面接触的层。
摘要（英）：

Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

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