The invention relates to the field of communication and discloses a radio frequency load driving circuit. The radio frequency load driving circuit comprises L NMOS transistors and M PMOS transistors, wherein L is a natural number larger than 1, M is a natural number, and L is larger than or equal to M. The L NMOS transistors are connected in a cascaded mode. When M is equal to 1, the PMOS transistors are connected in a common source mode; when M is larger than 1, the M PMOS transistors are connected in a cascaded mode. Grid electrodes of the PMOS transistors with source electrodes connected with a power source are connected with the first input voltage, grid electrodes of the NMOS transistors with source electrodes grounded are connected with the second input voltage, drain electrodes, connected with drain electrodes of the PMOS transistors, of the NMOS transistors are the output ends, the remaining grid electrodes of common grid transistors of the PMOS transistors are correspondingly connected with the bias voltages of the common grid transistors, a first bias voltage group is formed by the bias voltages of the common grid transistors of the PMOS transistors, the remaining grid electrodes of common grid transistors of the NMOS transistors are correspondingly connected with the bias voltages of the common grid transistors, and a second bias voltage group is formed by the bias voltages of the common grid transistors of the NMOS transistors. According to the radio frequency load driving circuit, a withstand voltage value of the circuit is increased, conversion efficiency of the circuit is improved, and linearity of the circuit is improved as well.