The present invention effectively prevents a silica glass crucible from buckling or a side wall section from collapsing toward the inside of the crucible, prevents dislocations from occurring in monocrystalline silicon, and increases the yield of single crystals. A silica glass crucible used to raise monocrystalline silicon is provided, said silica glass crucible being provided with a cylindrical side wall section having an edge that is open at the top, a mortar-shaped bottom section comprising a curved line, and a round section connecting the side wall section and the bottom section. In a cross section that passes through the axis of rotation of the silica glass crucible, the curvature of the inner surface of the round section is disposed in such a manner as to gradually increase in the direction of the bottom section from the side section.